We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for Gap semiconductor.
ipros is IPROS GMS ・ IPROS One of the largest technical database sites in Japan that collects information on.

Gap semiconductor - List of Manufacturers, Suppliers, Companies and Products

Gap semiconductor Product List

1～2 item / All 2 items

Displayed results
Wide bandgap semiconductor

Wide bandgap semiconductor

Provision of semiconductor technologies and products such as SiC and GaN.

Our company handles "wide bandgap semiconductors" such as SiC wafers, GaN wafers, and DLTS measurement devices. We offer a wide range of products and services for wide bandgap semiconductors, which have the potential to surpass silicon semiconductors. Additionally, we propose various materials, equipment, and technologies necessary for glass melting engineering to domestic customers in collaboration with our European partners. 【Two Business Divisions】 ■ Semiconductor Division: Providing semiconductor technologies and products such as SiC and GaN ■ Glass Melting Technology Division: Offering analysis, simulation services, and manufacturing equipment *For more details, please feel free to contact us.

  • Glass
  • Other semiconductors

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Analysis Case: Analysis of Defect Levels in Gallium Nitride

Analysis Case: Analysis of Defect Levels in Gallium Nitride

You can obtain various physical property information such as point defect formation energy, charge, and optical transitions!

Our organization conducts an analysis of defect levels in wide bandgap semiconductor gallium nitride (GaN) using first-principles calculations. Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. Here, we present a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. [Measurement and Processing Methods] ■ [PL] Photoluminescence Method ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

  • 1.png
  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
COPYRIGHT © 2001-2025 IPROS CORPORATION ALL RIGHTS RESERVED.